Beijing's Shunyi district plans to establish an industrial base for the third-generation semiconductors, spanning over 3,000 mu (2 square kilometers), according to a semiconductor-themed forum held recently.

The third-generation semiconductor features distinct advantages, such as high-temperature resistance, high-pressure resistance, and high-current resistance. These properties make it an ideal material for various emerging industries, including new energy vehicles, 5G technology, and photovoltaic power.

Shunyi boasts unique strength in developing the new-generation semiconductor, as it has long been involved in the field. According to a district official, an industrial landscape centered on chip-making and integrating the entire upstream and downstream supply chain has emerged in Shunyi. This district has successfully attracted 27 enterprises in the field, and thus becoming a national industrial cluster.

Furthermore, Shunyi has developed a collaborative industrial innovation platform, partnering with educational institutions such as Tsinghua University, Peking University, and the Chinese Academy of Sciences. This collaboration has introduced extensive resources in research and development, talent acquisition, and project management, leading to the implementation of numerous third-generation semiconductor-related transformation projects.

To boost its capacity for supporting this emerging industry, Shunyi has made significant strides in spatial planning and facility construction. The district has constructed standardized manufacturing plants covering 200,000 square meters, with the first phase of 74,000 square meters already operational.

Meanwhile, Shunyi has rolled out a slew of measures to promote the development of this industry, including providing subsidies of up to 30 million yuan (US$4.14 million) to support technological advancements, technology transfer, and other critical areas.

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